Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Studies on Si-doped AlGaN Epilayers

Growth optimization of Si doped AlGaN epilayers—with 20%, 30% and 45%Al content— grown on AlGaN-sapphire by MOVPE was investigated. We could realize n-type carrier concentrations from about 2 × 10 cm to 1 × 10 cm. The layers with high levels of dopants suffer from crack formation. Therefore, we used a short period super lattice to manage the strain between the doped layer and the undoped buffer...

Enhanced relaxation and intermixing in Ge islands grown on pit-patterned Si(001) substrates.

We compare elastic relaxation and Si-Ge distribution in epitaxial islands grown on both pit-patterned and flat Si(001) substrates. Anomalous x-ray diffraction yields that nucleation in the pits provides a higher relaxation. Using an innovative, model-free fitting procedure based on self-consistent solutions of the elastic problem, we provide compositional and elastic-energy maps. Islands grown ...

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures.

Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making th...

Effect of Ge on dislocation nucleation from surface imperfections in Si-Ge

Z. Li, R. C. Picu, R. Muralidhar, and P. Oldiges Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, Yorktown Heights, New York 10598, USA IBM Corporation, Semiconductor Research and Development Center, Systems and Technology Group, H...